BSV52

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BSV52

BSV52
C

E

SOT-23
Mark: B2

B

NPN Switching Transistor
This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.

Absolute Maximum Ratings
Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter

Value
12 20 5.0 200 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient

Max
BSV52 225 1.8 556

Units
mW mW/ C C/W

Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

1997 Fairchild Semiconductor Corporation

BSV52 Datasheet Fairchild Download PDF

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BSV52 DATASHEET