BU408

BU406/406H/408

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BU406/406H/408

BU406/406H/408
High Voltage Switching
Use In Horizontal Deflection Output Stage

TO-220 2.Collector 3.Emitter

1.Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Value 400 200 6 7 10 4 60 150 - 55 150 Units V V V A A A W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICES Parameter Collector Cut-off Current Test Condition VCE 400V, VBE 0 VCE 250V, VBE 0 VCE 250V, VBE 0 TC 150 C VBE 6V, IC 0 IC 5A, IB 0.5A IC 5A, IB 0.8A IC 6A, IB 1.2A IC 5A, IB 0.5A IC 5A, IB 0.5A IC 6A, IB 1.2A VCE 10V, IC 0.5A IC 5A, IB 0.5A IC 5A, IB 0.8A IC 6A, IB 1.2A 10 0.75 0.4 0.4 Min. Max. 5 100 1 1 1 1 1 1.2 1.2 1.5 Units mA A mA mA V V V V V V MHz s s s

IEBO VCE(sat)

Emitter Cut-off Current Collector-Emitter Saturation Voltage : BU406 : BU406H : BU408 Base-Emitter Saturation Voltage : BU406 : BU406H : BU408 Current Gain Bandwidth Product Turn OFF Time : BU406 : BU406H : BU408

VBE(sat)

fT tOFF

2000 Fairchild Semiconductor International

Rev. A, February 2000