BU806/807

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BU806/807

BU806/807
High Voltage Fast Switching Darlington Transistor
Using In Horizontal Output Stages of 110 Crt Video Displays BUILT-IN SPEED-UP Diode Between Base and Emitter
1

TO-220 2.Collector 3.Emitter

1.Base

NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BU806 : BU807 VCEO Collector-Emitter Voltage : BU806 : BU807 VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature 200 150 6 8 15 2 60 150 - 55 150 V V V A A A W C C 400 330 V V Value Units

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO (sus) Parameter Collector-Emitter Sustaining Voltage : BU806 : BU807 Collector Cut-off Current : BU806 : BU807 Collector Cut-off Current : BU806 : BU807 Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Forward Voltage Test Condition IC 100mA, IB 0 Min. 200 150 100 100 100 100 3 1.5 2.4 2 Max. Units V V A A A A mA V V V

ICES

VCE 400V, VBE 0 VCE 330V, VBE 0 VCE 400V, VBE -6V VCE 330V, VBE -6V VBE 6V, IC 0 IC 5A, IB 50mA IC 5A, IB 50mA IF 4A

ICEV

IEBO VCE(sat) VBE(sat) VF

Pulsed: pulsed duration 300 s, duty cycle 1.5%

2000 Fairchild Semiconductor International

Rev. A, February 2000

BU806 Datasheet Fairchild Download PDF

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BU806 DATASHEET