BUT11A

BUT11/11A

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BUT11/11A

BUT11/11A
High Voltage Power Switching Applications

TO-220 2.Collector 3.Emitter

NPN Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BUT11 : BUT11A VCEO Collector-Emitter Voltage : BUT11 : BUT11A Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

1.Base

Value 850 1000

Units V

V 400 450 9 5 10 2 4 100 150 - 65 150 V A A A A W C C

VEBO IC ICP IB IBP PC TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BUT11 : BUT11A Collector Cut-off Current : BUT11 : BUT11A IEBO VCE(sat) Emitter Cut-off Current Collector-Emitter Saturation Voltage : BUT11 : BUT11A Base-Emitter Saturation Voltage : BUT11 : BUT11A Turn On Time Storage Time Fall Time VCE 850V, VBE 0 VBE 9V, IC 0 IC 3A, IB 0.6A IC 2.5A, IB 0.5A IC 3A, IB 0.6A IC 2.5A, IB 0.5A VCC 250V, IC 2.5A IB1 -IB2 0.5A RL 100 1 1 10 1.5 1.5 1.3 1.3 1 4 0.8 mA mA mA V V V V s s s Test Condition IC 100mA, IB 0 Min. 400 450 Typ. Max. Units V V

ICES

VBE(sat)

tON tSTG tF

Pulsed: pulsed duration 300 s, duty cycle 1.5%

Thermal Characteristics TC 25 C unless otherwise noted
Symbol RjC Parameter Thermal Resistance, Junction to Case Typ Max 1.25 Units C/W
Rev. B1, August 2001

2001 Fairchild Semiconductor Corporation