BUT12A

BUT12/12A

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BUT12/12A

BUT12/12A
High Voltage Power Switching Applications

TO-220 2.Collector 3.Emitter

1.Base

NPN Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BUT12 : BUT12A VCEO Collector-Emitter Voltage : BUT12 : BUT12A Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature 850 1000 400 450 8 20 4 100 150 - 65 175 V V V V A A A W C C Value Units

IC ICP IB PC TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) ICES IEBO VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn On Time Storage Time Fall Time Test Condition IC 100mA, L 25mH VCE VCES, VBE 0 VBE 9V, IC 0 IC 6A, IB 1.2A IC 6A, IB 1.2A VCC 250V, IC 6A IB1 - IB2 1.2A RL 41.6 Min. 400 Typ. Max. 1 10 1.5 1.5 1 4 0.8 Units V mA mA V V s s s

Pulsed Test: PW 300 s, duty cycle 1.5%

2001 Fairchild Semiconductor Corporation

Rev. A1, August 2001