D45C11

D45C11 / NZT45C11

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D45C11 / NZT45C11

D45C11

NZT45C11
C

E C E C

TO-220

SOT-223

PNP Current Driver Transistor
This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. See NZT751 for characteristics.

Absolute Maximum Ratings
Symbol
VCEO IC TJ, Tstg

TA 25 C unless otherwise noted

Parameter
Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range

Value
80 4.0 -55 to 150

Units
V A C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient D45C11 60 480 2.1 62.5

Max
NZT45C11 1.2 9.7 103
2

Units
W mW/ C C/W C/W

Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm .

1997 Fairchild Semiconductor Corporation