D45C8 PNP Power Amplifier

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D45C8 PNP Power Amplifier

April 2005

D45C8
PNP Power Amplifier
Sourced from process 5P.

1

TO-220

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings
Symbol
VCEO IC TJ, TSTG Collector-Emitter Voltage Collector Current

Ta 25 C unless otherwise noted

Parameter
- Continuous

Value
-60 -4.0 -55 to 150

Units
V A C

Operating and Storage Junction Temperature Range

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol
Off Characteristics V(BR)CEO ICES IEBO hFE VCE (sat) VBE (sat) fT Collector-Emitter Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product IC -100mA, IB 0 VCB -70V, IE 0 VEB -5.0V, IB 0 VCE -1V, IC -0.2A VCE -1V, IC -2.0A IC -1.0A,IB -50mA IC -1.0A,IB -100mA IC -20mA, VCE -4.0V 32 40 20 -60 -10 -100 120 -0.5 -1.3 V V pF V A A

Parameter

Test Condition

Min.

Max.

Units

On Characteristics

Small Signal Characteristics

Thermal Characteristics Ta 25 C unless otherwise noted
Symbol
PD RJC RJA

Parameter
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max.
60 480 2.1 62.5

Units
W mW/ C C/W C/W

2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

D45C8 Rev. A

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D45C8 DATASHEET