D45H2A

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D45H2A

D45H2A
PNP Power Amplifier
This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from process 5Q. TO-220

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 30 8.0 - 55 150 Units V A C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol Off Characteristics V(BR)CEO ICBO IEBO hFE Parameter Test Condition IC 100mA, IB 0 VCB 60V, IE 0 VEB 5V, IC 0 VCE 5V, IC 8A VCE 5V, IC 10A VCE 5V, IC 12A IC 8A, IB 0.4A IC 8A, IB 0.8A VCE 10V, IC 500mA 25 100 80 65 1 1.5 V V MHz Min. 30 10 100 Typ. Max. Units V A A Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

On Characteristics

VCE(sat) VBE(sat) fT

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product

Small Signal Characteristics

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 60 480 2.1 62.5 Units W mW/ C C/W C/W

2002 Fairchild Semiconductor Corporation

Rev. A, February 2002