D45H8

D45H8 / NZT45H8

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D45H8 / NZT45H8

Discrete POWER Signal Technologies

D45H8

NZT45H8
C

E C E C

TO-220

SOT-223

PNP Power Amplifier
This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q.

Absolute Maximum Ratings
Symbol
VCEO IC TJ, Tstg Collector-Emitter Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter

Value
60 8.0 -55 to 150

Units
V A C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient D45H8 60 480 2.1 62.5

Max
NZT45H8 1.5 12 83.3

Units
W mW/ C C/W C/W

Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

1997 Fairchild Semiconductor Corporation