DF005M

DF005M - DF10M

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DF005M - DF10M

DF005M - DF10M
Features
Surge overload rating: 50 amperes peak. Glass passivated junction. Low leakage. UL certified, UL E111753.

DIP

Bridge Rectifiers
Absolute Maximum Ratings
Symbol
VRRM VRMS VR IF(AV) IFSM Tstg TJ
TA 25 C unless otherwise noted

Parameter
005M Maximum Repetitive Reverse Voltage Maximum RMS Bridge Input Voltage DC Reverse Voltage (Rated VR) Average Rectified Forward Current, TA 40 C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 50 35 50 01M 100 70 100 02M 200 140 200

Value
04M 400 280 400 1.5 50 -55 to 150 -55 to 150 06M 600 420 600 08M 800 560 800 10M 1000 700 1000

Units
V V V A A C C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol
PD RJA

Parameter
Power Dissipation Thermal Resistance, Junction to Ambient, per leg

Value
3.1 40

Units
W C/W

Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).

Electrical Characteristics
Symbol
VF IR

TA 25 C unless otherwise noted

Parameter
Forward Voltage, per bridge 1.0 A Reverse Current, total bridge rated VR TA 25 C TA 125 C I2t rating for fusing t 8.35 ms Total Capacitance, per leg VR 4.0 V, f 1.0 MHz

Device
1.1 5.0 500 10 25

Units
V A A A2s pF

2001 Fairchild Semiconductor Corporation

DF005M-DF10M, Rev. C