EGF1B

EGF1A - EGF1D

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EGF1A - EGF1D

Features
Low forward voltage drop. Low profile package. Fast switching for high efficiency.

SMA/DO-214AC
COLOR BAND DENOTES CATHODE

Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA 25 C unless otherwise noted

Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current, TL 100 C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature

Value
1A 50 1B 100 1.0 30 -65 to 175 -65 to 175 1C 150 1D 200

Units
V A A C C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol
PD RJA RJL Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead

Parameter

Value
2.0 85 30

Units
W C/W C/W

Device mounted on FR-4 PCB 0.013 mm.

Electrical Characteristics
Symbol
VF trr IR CT

TA 25 C unless otherwise noted

Parameter
1A Forward Voltage 1.0 A Reverse Recovery Time IF 0.5 A, IR 1.0 A, IRR 0.25 A Reverse Current rated VR TA 25 C TA 100 C Total Capacitance VR 4.0 V, f 1.0 MHz

Device
1B 1.0 50 10 100 15 1C 1D

Units
V ns A A pF

2001 Fairchild Semiconductor Corporation

EGF1A-EGF1D, Rev. D