F5E1

F5E1/2/3

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F5E1/2/3
AlGaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31) 0.184 (4.67)

DESCRIPTION
The F5E series are 880nm LEDs in a wide angle, TO-46 package.

0.030 (0.76) NOM

0.155 (3.94) MAX

FEATURES
Good optical to mechanical alignment Mechanically and wavelength matched

1.00 (25.4) MIN

SCHEMATIC
ANODE (Connected To Case) CATHODE 3

ANODE (CASE)

to the TO-18 series phototransistor Hermetically sealed package

0.100 (2.54) 0.050 (1.27)

High irradiance level

1

0.040 (1.02) 0.040 (1.02) 45

1

3 0.020 (0.51) 2X

NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified.

1. Derate power dissipation linearly 1.70 mW/ C above 25 C ambient. 2. Derate power dissipation linearly 13.0 mW/ C above 25 C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16" (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension 7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 steradians.

ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Continuous Forward Current Forward Current (pw, 10 s; 100Hz) Forward Current (pw, 1 s; 200Hz) Reverse Voltage Power Dissipation (TA 25 C)(1) Power Dissipation (TC 25 C)(2)

(TA 25 C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF IF IF VR PD PD Rating -65 to 125 -65 to 150 240 for 5 sec 260 for 10 sec 100 3 10 3 170 1.3 Unit C C C C mA A A V mW W

ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER TEST CONDITIONS

(TA 25 C) (All measurements made under pulse conditions)
MIN TYP MAX UNITS

SYMBOL

Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage Reverse Leakage Current Total Power F5E1 (7) Total Power F5E2 (7) Total Power F5E3 (7) Rise Time 0-90% of output Fall Time 100-10% of output

IF 100 mA IF 100 mA VR 3 V IF 100 mA IF 100 mA IF 100 mA

"PE VF IR PO PO PO tr tf

-- -- -- -- 12.0 9.0 10.5 -- --

880 40 -- -- -- -- -- 1.5 1.5

-- -- 1.7 10 -- -- -- -- --

nm Deg. V A mW mW mW s s

2001 Fairchild Semiconductor Corporation DS300287 4/25/01

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