FCA20N60F

FCA20N60F 600V N-CHANNEL FRFET

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FCA20N60F 600V N-CHANNEL FRFET

FCA20N60F
600V N-CHANNEL FRFET Features
650V TJ 150 C Typ. Rds(on) 0.15 Fast Recovery Type ( trr 160ns ) Ultra low gate charge (typ. Qg 75nC) Low effective output capacitance (typ. Coss.eff 165pF) 100% avalanche tested

SuperFET
Description

January 2007

SuperFETTM is, Farichild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

TO-3PN
G DS

FCA Series

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FCA20N60F
600 20 12.5 60 30 690 20 20.8 50 208 1.67 -55 to 150 300

Unit
V A A A V mJ A mJ V/ns W W/ C C C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

FCA20N60F
0.6 40

Unit
C/W C/W

When mounted on the minimum pad size recommended (PCB Mount)

2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FCA20N60F Rev. A