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FCA47N60

By datasheet - April 3rd, 2008

FCH47N60 / FCA47N60

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FCH47N60 / FCA47N60

FCH47N60 / FCA47N60
Features
650V TJ 150 C Typ. Rds(on) 0.058 Ultra low gate charge (typ. Qg 210nC) Low effective output capacitance (typ. Coss.eff 420pF) 100% avalanche tested

SuperFET
Description
SuperFETTM is, Farichild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

December 2006

TM

D

G G D S

TO-247

FDH Series

TO-3P
G DS

FDA Series

S

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FCH47N60
600

FCA47N60

Unit
V A A A V mJ A mJ V/ns W W/ C C C

47 29.7 141 30 1800 47 41.7 4.5 417 3.33 -55 to 150 300

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RCS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

Typ.
-0.24 --

Max.
0.3 -41.7

Unit
C/W C/W C/W

2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FCH47N60 / FCA47N60 Rev.B

FCA47N60 Datasheet Fairchild Download PDF

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