FCB11N60

FCB11N60 600V N-Channel MOSFET

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FCB11N60 600V N-Channel MOSFET

July 2005

SuperFET
FCB11N60
600V N-Channel MOSFET
Features
650V TJ 150 C Typ. RDS(on) 0.32 Ultra low gate charge (typ. Qg 40nC) Low effective output capacitance (typ. Coss.eff 95pF) 100% avalanche tested

Description
SuperFETTM is, Farichild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

G G S S

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FCB11N60
600 11 7 33 30 340 11 12.5 4.5 125 1.0 -55 to 150 300

Unit
V A A A V mJ A mJ V/ns W W/ C C C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RJA RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient

FCB11N60
1.0 40 62.5

Unit
C/W C/W C/W

When mounted on the minimum pad size recommended (PCB Mount)

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FCB11N60 Rev. A1