FCI7N60

FCI7N60 600V N-Channel MOSFET

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FCI7N60 600V N-Channel MOSFET

July 2005

SuperFET
FCI7N60
600V N-Channel MOSFET
Features
650V TJ 150 C Typ. RDS(on) 0.53 Ultra Low Gate Charge (typ. Qg 25nC) Low Effective Output Capacitance (typ. Cosseff. 60pF) 100% Avalanche Tested

Description
SuperFETTM is, Farichild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

G G D S S

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FCI7N60
600 7 4.4 21 30 230 7 8.3 4.5 83 0.67 -55 to 150 300

Unit
V A A A V mJ A mJ V/ns W W/ C C C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

FCI7N60
1.5 62.5

Unit
C/W C/W

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FCI7N60 Rev. A1