FCP11N60

FCP11N60/FCPF11N60

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FCP11N60/FCPF11N60

SuperFET
FCP11N60/FCPF11N60
General Description
SuperFETTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features
650V Tj 150 C Typ. Rds(on) 0.32 Ultra low gate charge (typ. Qg 40nC) Low effective output capacitance (typ. Coss.eff 95pF) 100% avalanche tested

G G DS

TO-220
FCP Series

GD S

TO-220F
FCPF Series

Absolute Maximum Ratings
Symbol ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current

TC 25 C unless otherwise noted

Parameter - Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FCP11N60 11 7 33

FCPF11N60 11 7 33 30 340 11 12.5 4.5

Units A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)
(Note 2) (Note 1) (Note 1) (Note 3)

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

125 1.0

36 0.29 -55 to 150 300

Drain current limited by maximum junction termperature

Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FCP11N60 1.0 0.5 62.5 FCPF11N60 3.5 -62.5 Units C/W C/W C/W

2004 Fairchild Semiconductor Corporation

Rev. B, March 2004