FCP11N60F/FCPF11N60F 600V N-Channel MOSFET

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FCP11N60F/FCPF11N60F 600V N-Channel MOSFET

SuperFET
FCP11N60F/FCPF11N60F
600V N-Channel MOSFET
Features
650V TJ 150 C Typ. RDS(on) 0.32 Fast Recovery Type ( trr 120ns) Ultra Low Gate Charge (typ. Qg 40nC) Low Effective Output Capacitance (typ. Cosseff. 95pF) 100% avalanche tested

TM

Description
SuperFETTM is, Farichild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

D

"

G G DS

"
" "

TO-220

GD S

TO-220F

S

Absolute Maximum Ratings
Symbol
ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FCP11N60F
11 7 33 30
(Note 2) (Note 1) (Note 1) (Note 3)

FCPF11N60F
11 7 33

Units
A A A V

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

340 11 12.5 4.5 125 1.0 -55 to 150 300 36 0.29

mJ A mJ V/ns W W/ C C C

Drain current limited by maximum junction termperature.

Thermal Characteristics
Symbol
RJC RCS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

FCP11N60F
1.0 0.5 62.5

FCPF11N60F
3.5 -62.5

Units
C/W C/W C/W

2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FCP11N60F/FCPF11N60F Rev. A

FCP11N60F Datasheet Fairchild Download PDF

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FCP11N60F DATASHEET