FDA20N50

FDA20N50 500V N-Channel MOSFET

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FDA20N50 500V N-Channel MOSFET

April 2007

FDA20N50
500V N-Channel MOSFET
Features
22A, 500V, RDS(on) 0.23 VGS 10 V Low gate charge ( typical 45.6 nC) Low Crss ( typical 27 pF) Fast switching 100% avalanche tested Improved dv/dt capability

UniFET
Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

TO-3P
G DS

FDA Series

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FDA20N50
500 22 13.2 88 30 1110 22 28.0 4.5 280 2.3 -55 to 150 300

Unit
V A A A V mJ A mJ V/ns W W/ C C C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Drain current limited by maximum junction termperature.

Thermal Characteristics
Symbol
RJC RCS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

Min.
-0.24 --

Max.
0.44 -40

Unit
C/W C/W C/W

2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com