FDA2712

FDA2712 N-Channel UltraFET Trench MOSFET

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FDA2712 N-Channel UltraFET Trench MOSFET

April 2007

FDA2712
N-Channel UltraFET Trench MOSFET
250V, 64A, 34m Features
RDS(on) 29.2m VGS 10 V, ID 40A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS compliant

UltraFET
tm

Description
This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Applications
PDP application

G G DS

TO-3PN
S

MOSFET Maximum Ratings
Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC 25oC) -Continuous (TC 25oC) - Pulsed -Continuous (TC 100oC) (Note 1) (Note 2) (Note 3) Ratings 250 30 64 44 240 245 4.5 357 2.85 -55 to 150 300 Units V V A A mJ V/ns W W/oC
oC o

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.35 40 Units
o

C/W

2007 Fairchild Semiconductor Corporation FDA2712 Rev. A

www.fairchildsemi.com