FDA50N50

FDH50N50 / FDA50N50 500V N-Channel MOSFET

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FDH50N50 / FDA50N50 500V N-Channel MOSFET

UniFET
FDH50N50 / FDA50N50
500V N-Channel MOSFET Features
48A, 500V, RDS(on) 0.105 VGS 10 V Low gate charge ( typical 105 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

G G D S

"
" "

TO-247
FDH Series

TO-3P
G DS
FDA Series

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FDH50N50/FDA50N50
500 48 30.8 192 20 1868 48 62.5 4.5 625 5 -55 to 150 300

Unit
V A A A V mJ A mJ V/ns W W/ C C C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RCS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

Min.
-0.24 --

Max.
0.2 -40

Unit
C/W C/W C/W

2004 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FDH50N50 / FDA50N50 Rev. A