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FDA59N25

By datasheet - April 3rd, 2008

FDA59N25 250V N-Channel MOSFET

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FDA59N25 250V N-Channel MOSFET

September 2005

UniFET
FDA59N25
250V N-Channel MOSFET
Features
59A, 250V, RDS(on) 0.049 VGS 10 V Low gate charge (typical 63 nC) Low Crss (typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability

TM

VDS 250V VDS(Avalanche) 300V RDS(on) Typ. 10V 41m

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

D

G

TO-3P
G DS
FDA Series

S

Absolute Maximum Ratings
Symbol
VDSS VDS(Avalanche) ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Repetitive Avalanche Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3) (Note 1, 2)

Parameter

FDA59N25
250 300 59 35
(Note 1)

Unit
V V A A A V mJ A mJ V/ns W W/ C C C

- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed

236 30 1458 59 39.2 4.5 392 3.2 -55 to 150 300

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RCS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

Min.
-0.24 --

Max.
0.32 -40

Unit
C/W C/W C/W

2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FDA59N25 Rev. A

FDA59N25 Datasheet Fairchild Download PDF

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