FDA59N30

FDA59N30 300V N-Channel MOSFET

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FDA59N30 300V N-Channel MOSFET

UniFET
FDA59N30
300V N-Channel MOSFET Features
59A, 300V, RDS(on) 0.056 VGS 10 V Low gate charge ( typical 77 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

"
" "

TO-3P
G DS
FDA Series

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FDA59N30
300 59 35 236 30 1734 59 50 4.5 500 4 -55 to 150 300

Unit
V A A A V mJ A mJ V/ns W W/ C C C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RCS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

Min.
-0.24 --

Max.
0.25 -40

Unit
C/W C/W C/W

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FDA59N30 Rev. A