FDA62N28

FDA62N28 280V N-Channel MOSFET

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FDA62N28 280V N-Channel MOSFET

UniFET
FDA62N28
280V N-Channel MOSFET Features
62A, 280V, RDS(on) 0.051 VGS 10 V Low gate charge ( typical 77 nC) Low Crss ( typical 83 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

"
" "

TO-3P
G DS
FDA Series

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FDA62N28
280 62 37 248 30 1919 62 50 4.5 500 4 -55 to 150 300

Unit
V A A A V mJ A mJ V/ns W W/ C C C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RCS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

Min.
-0.24 --

Max.
0.25 -40

Unit
C/W C/W C/W

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FDA62N28 Rev. A