FDAF59N30

FDAF59N30 300V N-Channel MOSFET

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FDAF59N30 300V N-Channel MOSFET

October 2006

FDAF59N30
300V N-Channel MOSFET Features
34A, 300V, RDS(on) 0.056 VGS 10 V Low gate charge ( typical 77 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv/dt capability

UniFET
Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

G G D S

TO-3PF
FDAF Series

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FDAF59N30
300 34 20 136 30 1734 34 16.1 4.5 161 1.3 -55 to 150 300

Unit
V A A A V mJ A mJ V/ns W W/ C C C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

Min.
---

Max.
0.77 40

Unit
C/W C/W

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FDAF59N30 Rev. A