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FDAF69N25

By datasheet - April 3rd, 2008

FDAF69N25 250V N-Channel MOSFET

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FDAF69N25 250V N-Channel MOSFET

September 2005

UniFET
FDAF69N25
250V N-Channel MOSFET
Features
34A, 250V, RDS(on) 0.041 VGS 10 V Low gate charge ( typical 77 nC) Low Crss ( typical 84 pF) Fast switching Improved dv/dt capability

TM

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switched mode power supplies.

D

G G D S

TO-3PF
FQAF Series

S

Absolute Maximum Ratings
Symbol
VDSS VDS(Avalanche) ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Repetitive Avalanche Voltage Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3) (Note 1) (Note 2)

Parameter

FDAF69N25
250 300 34 21.5
(Note 1)

Unit
V V A A A V mJ A mJ V/ns W W/ C C C

- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed

136 30 1894 34 11.5 4.5 115 0.93 -55 to 150 300

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RCS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

Min.
-0.24 --

Max.
1.08 -40

Unit
C/W C/W C/W

2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FDAF69N25 Rev. A

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