FDAF75N28

FDAF75N28 280V N-Channel MOSFET

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FDAF75N28 280V N-Channel MOSFET

October 2006

FDAF75N28
280V N-Channel MOSFET
Features
46A, 280V, RDS(on) 0.041 VGS 10 V Low gate charge ( typical 111 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability

UniFET
Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

G G D S

TO-3PF
FDAF Series

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FDAF75N28
280 46 28 184 30 3080 46 21.5 4.5 215 1.72 -55 to 150 300

Unit
V A A A V mJ A mJ V/ns W W/ C C C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

Min.
---

Max.
0.58 40

Unit
C/W C/W

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FDAF75N28 Rev. A