FDB035AN06A0

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FDB035AN06A0

July 2002

FDB035AN06A0
N-Channel PowerTrench MOSFET 60V, 80A, 3.5m
Features
r DS(ON) 3.2m (Typ.), V GS 10V, ID 80A Qg(tot) 95nC (Typ.), VGS 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
Formerly developmental type 82584

Applications
Motor / Body Load Control ABS Systems Powertrain Management Injection Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems

D
GATE

G
SOURCE TO-263AB FDB SERIES DRAIN (FLANGE)

MOSFET Maximum Ratings TC 25 C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC 153oC, VGS 10V) Continuous (Tamb 25oC, VGS 10V, with RJA 43oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 80 22 Figure 4 625 310 2.07 -55 to 175 A A A mJ W W/oC
o

Ratings 60 20

Units V V

Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263, (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.48 62 43
o o o

C/W C/W C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

2002 Fairchild Semiconductor Corporation

FDB035AN06A0 Rev. A