FDB060AN08A0

FDB060AN08A0 / FDP060AN08A0

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FDB060AN08A0 / FDP060AN08A0

November 2002

FDB060AN08A0 / FDP060AN08A0
N-Channel PowerTrench MOSFET 75V, 80A, 6.0m
Features
r DS(ON) 4.8m (Typ.), V GS 10V, ID 80A Qg(tot) 73nC (Typ.), VGS 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
Formerly developmental type 82680

Applications
42V Automotive Load Control Starter / Alternator Systems Electronic Power Steering Systems Electronic Valve Train Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V systems

DRAIN (FLANGE)

D
SOURCE DRAIN GATE SOURCE TO-220AB FDP SERIES TO-263AB FDB SERIES DRAIN (FLANGE) GATE

G S

MOSFET Maximum Ratings TC 25 C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC 127oC, VGS 10V) Continuous (Tamb 25oC, VGS 10V, with RJA 43oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 80 16 Figure 4 350 255 1.7 -55 to 175 A A A mJ W W/oC
o

Ratings 75 20

Units V V

Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.58 62 43
oC/W o o

C/W C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

2002 Fairchild Semiconductor Corporation

FDB060AN08A0 / FDP060AN08A0 Rev. A