FDB12N50TM

FDB12N50 / FDI12N50 N-Channel MOSFET

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FDB12N50 / FDI12N50 N-Channel MOSFET

June 2007

FDB12N50TM
N-Channel MOSFET
500V, 11.5A, 0.65 Features
RDS(on) 0.55 ( Typ.) VGS 10V, ID 6A Low gate charge ( Typ. 22nC) Low Crss ( Typ. 12pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant

UniFETTM
tm

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

D2-PAK
G S

FDB Series

G D S

I2-PAK FDI Series

MOSFET Maximum Ratings TC 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC 25oC) -Continuous (TC 25oC) - Pulsed -Continuous (TC 100oC) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Ratings 500 30 11.5 6.9 46 456 11.5 16.7 4.5 165 1.33 -55 to 150 300 Units V V A A mJ A mJ V/ns W W/oC
o o

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

C C

Thermal Characteristics
Symbol RJC RJA RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Ratings 0.75 40 62.5
o

Units C/W

When mounted on the minimum pad size recommended (PCB Mount)

2007 Fairchild Semiconductor Corporation FDB12N50TM Rev. A1

www.fairchildsemi.com