FDB2532

FDB2532 / FDP2532 / FDI2532

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FDB2532 / FDP2532 / FDI2532

August 2002

FDB2532 / FDP2532 / FDI2532
N-Channel PowerTrench MOSFET 150V, 79A, 16m
Features
r DS(ON) 14m (Typ.), VGS 10V, ID 33A Qg(tot) 82nC (Typ.), VGS 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
Formerly developmental type 82884

Applications
DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42V Automotive Load Control Electronic Valve Train Systems
D

DRAIN (FLANGE)

SOURCE DRAIN GATE SOURCE GATE

DRAIN (FLANGE)

SOURCE DRAIN GATE

TO-220AB
FDP SERIES

TO-263AB
FDB SERIES

DRAIN (FLANGE)

TO-262AB
FDI SERIES

MOSFET Maximum Ratings TC 25 C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC 25oC, VGS 10V) ID Continuous (TC 100oC, VGS 10V) Continuous (Tamb 25oC, VGS 10V, R JA 43oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 79 56 8 Figure 4 400 310 2.07 -55 to 175 A A A A mJ W W/oC
oC

Ratings 150 20

Units V V

Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-220, TO-263, TO-262 Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in copper pad area
2

0.48 62 43

o o o

C/W C/W C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

2002 Fairchild Semiconductor Corporation

FDB2532 / FDP2532 / FDI2532 Rev. B