FDB2572

FDB2572 / FDP2572

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FDB2572 / FDP2572

September 2002

FDB2572 / FDP2572
N-Channel PowerTrench MOSFET 150V, 29A, 54m
Features
r DS(ON) 45m (Typ.), VGS 10V, ID 9A Qg(tot) 26nC (Typ.), VGS 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
Formerly developmental type 82860

Applications
DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42V Automotive Load Control Electronic Valve Train Systems
DRAIN (FLANGE) GATE SOURCE

SOURCE DRAIN GATE DRAIN (FLANGE)

TO-220AB
FDP SERIES

TO-263AB
FDB SERIES

MOSFET Maximum Ratings TC 25 C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC 25oC, VGS 10V) ID Continuous (TC 100oC, VGS 10V) Continuous (Tamb 25oC, VGS 10V, R JA 43oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 29 20 4 Figure 4 36 135 0.9 -55 to 175 A A A A mJ W W/oC
o

Ratings 150 20

Units V V

Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in copper pad area
2

1.11 62 43

o o o

C/W C/W C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

2002 Fairchild Semiconductor Corporation

FDB2572 / FDP2572 Rev. B