FDB2614 200V N-Channel PowerTrench MOSFET

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FDB2614 200V N-Channel PowerTrench MOSFET

November 2006

FDB2614
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

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Description
62A, 200V, RDS(on) 22.9m VGS 10 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability

Application
PDP application

D

D

G G S

S

Absolute Maximum Ratings
Symbol
VDS VGS ID IDM EAS dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1) (Note 2) (Note 3)

Parameter

Ratings
200 30 62 39.3 see Figure 9 145 4.5 260 2.1 -55 to 150 300

Unit
V V A A A mJ V/ns W W/ C C C

Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol
RJC RJA RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient

Min.
----

Max.
0.48 40 62.5

Unit
C/W C/W C/W

When mounted on the minimum pad size recommended (PCB Mount)

2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FDB2614 Rev. A

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FDB2614 DATASHEET