FDB2670

FDP2670/FDB2670

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FDP2670/FDB2670

November 2001

FDP2670/FDB2670
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features
19 A, 200 V. RDS(ON) 130 m VGS 10 V

Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability

G
G D S TO-220
FDP Series

TO-263AB
FDB Series

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
200 20
(Note 1) (Note 1)

Units
V V A A W W /C V/ns C

19 40 93 0.63 3.2 65 to 175

Total Power Dissipation TC 25 C Derate above 25 C Peak Diode Recovery dv/dt
(Note 3)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.6 62.5 C/W C/W

Package Marking and Ordering Information
Device Marking FDB2670 FDP2670 Device FDB2670 FDP2670 Reel Size 13 Tube Tape width 24mm n/a Quantity 800 units 45 units

2001 Fairchild Semiconductor Corporation

FDP2670/FDB2670 Rev C1(W)