FDB2710 250V N-Channel PowerTrench MOSFET

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FDB2710 250V N-Channel PowerTrench MOSFET

November 2006

FDB2710
250V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

tm

Description
50A, 250V, RDS(on) 36.3m VGS 10 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability

Application
PDP application

D

D

G
G S

S

Absolute Maximum Ratings
Symbol
VDS VGS ID IDM EAS dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source voltage Drain Current Drain Current - Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1) (Note 2) (Note 3)

Parameter

Ratings
250 30 50 31.3 See Figure 9 145 4.5 260 2.1 -55 to 150 300

Unit
V V A A A mJ V/ns W W/ C C C

Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RJA RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient

Min
----

Max
0.48 40 62.5

Unit
C/W C/W C/W

When mounted on the minimum pad size recommended (PCB Mount)

2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FDB2710 Rev. A

FDB2710 Datasheet Fairchild Download PDF

Add this permalink to your bookmarks for future download of FDB2710 datasheet

Permalink: http://datasheet.emcelettronica.com/fairchild/FDB2710

FDB2710 DATASHEET