FDB3672

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FDB3672

July 2004

FDB3672
N-Channel PowerTrench MOSFET 100V, 44A, 28m
Features
rDS(ON) 24m (Typ.), VGS 10V, ID 44A Qg(tot) 24nC (Typ.), VGS 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101

Applications
DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42V Automotive Load Control Electronic Valve Train Systems

Formerly developmental type 82760 DRAIN (FLANGE) GATE

SOURCE

TO-263AB
FDB SERIES

MOSFET Maximum Ratings TC 25 C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC 25oC, VGS 10V) ID Continuous (TC 100oC, VGS 10V) Continuous (Tamb 25oC, VGS 10V, RJA 43oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 44 31 7.2 Figure 4 120 120 0.8 -55 to 175 A A A A mJ W W/oC
o

Ratings 100 20

Units V V

Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.25 62 43
o

C/W C/W

oC/W o

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2004 Fairchild Semiconductor Corporation FDB3672 Rev. A