FDP4020P

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FDP4020P

September 2000

FDP4020P/FDB4020P
P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-DC converters requiring P-Channel.

Features
-16 A, -20 V. RDS(on) 0.08 VGS -4.5 V RDS(on) 0.11 VGS -2.5 V. Critical DC electrical parameters specified at elevated temperature. High density cell design for extremely low RDS(on). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. 175 C maximum junction temperature rating.

S

G

D

A bsolute M axim um Ratings
Sym bol
V DSS V G SS ID PD T J , T STG R JC R JA Drain-S ource V oltage G ate-S ource V oltage Drain Current - Continuous - P ulsed

T A 25 C unless otherw ise noted

Param eter

FD P4020P
-20 8 -16 -48 37.5

FD B 4020P

U nits
V V A W W / C C C/W C/W

Total P ower Dissipation T C 25 C Derate above 25 C O perating and S torage Junction Tem perature Range

0.25 -65 to 175

Therm al C haracteristics
Therm al Resistance, Junction-to- Case Therm al Resistance, Junction-to- A m bient
(N ote 1)

4 62.5 40

Package O utlines and O rdering Inform ation
D evice M arking
FDP 4020P

D evice
FDP 4020P

R eel Size
13

Tape W idth
12m m

Q uantity
2500 units

2000 Fairchild Semiconductor International

FDP4020P Rev. B

FDB4020P Datasheet Fairchild Download PDF

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FDB4020P DATASHEET