FDB52N20

FDB52N20 200V N-Channel MOSFET

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FDB52N20 200V N-Channel MOSFET

September 2005

UniFET
FDB52N20
200V N-Channel MOSFET
Features
52A, 200V, RDS(on) 0.049 VGS 10 V Low gate charge ( typical 49 nC) Low Crss ( typical 66 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

G G S

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FDB52N20
200 52 33 208 30 2520 52 35.7 4.5 357 2.86 -55 to 150 300

Unit
V A A A V mJ A mJ V/ns W W/ C C C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RJA RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient

Min.
----

Max.
0.35 40 62.5

Unit
C/W C/W C/W

When mounted on the minimum pad size recommended (PCB Mount)

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com