FDP5690/FDB5690

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FDP5690/FDB5690

July 2000

FDP5690/FDB5690
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.

Features
32 A, 60 V. RDS(ON) 0.027 VGS 10 V RDS(ON) 0.032 VGS 6 V. Critical DC electrical parameters specified at evevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175 C maximum junction temperature rating.

D

D

G

G D S

TO-220
FDP Series

G S
TC 25 C unless otherwise noted

TO-263AB
FDB Series

S

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Maximum Drain Current

Parameter

FDP5690
60 20

FDB5690

Units
V V A W W/ C C

- Continuous - Pulsed

32 100 58 0.4 -65 to 175

Total Power Dissipation TC 25 C Derate above 25 C Operating and Storage Junction Temperature Range

Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.6 62.5 C/W C/W

Package Marking and Ordering Information
Device Marking
FDB5690 FDP5690
2000 Fairchild Semiconductor International

Device
FDB5690 FDP5690

Reel Size
13 Tube

Tape Width
24mm N/A

Quantity
800 45

FDP5690/FDB5690 Rev. C

FDB5690 Datasheet Fairchild Download PDF

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FDB5690 DATASHEET