FDB6021P

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FDB6021P

January 2004

FDB6021P
20V P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel power MOSFET uses Fairchild s low voltage PowerTrench process. It has been optimized for power management applications.

Features
28 A, 20 V. RDS(ON) 30 m VGS 4.5 V RDS(ON) 40 m VGS 2.5 V RDS(ON) 65 m VGS 1.8 V Critical DC electrical parameters specified at elevated temperature High performance trench technology for extremely low RDS(ON) 175 C maximum junction temperature rating

Applications
Battery management Load switch Voltage regulator

D
G

S

G S TO-263AB
FDB Series

D
TA 25oC unless otherwise noted

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
20 8
(Note 1) (Note 1)

Units
V V A W W C C

28 80 37 0.25 65 to 175

Total Power Dissipation TC 25 C Derate above 25 C Operating and Storage Junction Temperature Range

Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 4 62.5 C/W C/W

Package Marking and Ordering Information
Device Marking FDB6021P Device FDB6021P Reel Size 13" Tape width 24mm Quantity 800 units

2004 Fairchild Semiconductor Corporation

FDB6021P Rev D(W)

FDB6021P Datasheet Fairchild Download PDF

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FDB6021P DATASHEET