FDP6030BL/FDB6030BL

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FDP6030BL/FDB6030BL

July 2000

FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrench MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.

Features
40 A, 30 V. RDS(ON) 0.018 VGS 10 V RDS(ON) 0.024 VGS 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175 C maximum junction temperature rating.

D

D
G

G

D

TO-220 S
FDP Series

G S
TC 25 C unless otherwise noted

TO-263AB
FDB Series

S

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG RJC RJA Drain-Source Voltage Gate-Source Voltage Maximum Drain Current

Parameter

FDP6030BL

FDB6030BL
30 20 40 120 60 0.36

Units
V V A W W/ C C C/W C/W

- Continuous - Pulsed

(Note 1)

Total Power Dissipation TC 25 C Derate above 25 C Operating and Storage Junction Temperature Range

-65 to 175

Thermal Characteristics
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.5 62.5

Package Marking and Ordering Information
Device Marking
FDB6030BL FDP6030BL

Device
FDB6030BL FDP6030BL

Reel Size
13 Tube

Tape Width
24mm N/A

Quantity
800 45

2000 Fairchild Semiconductor International

FDP6030BL/FDB6030BL Rev.C

FDB6030BL Datasheet Fairchild Download PDF

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FDB6030BL DATASHEET