FDB6030L

FDP6030L/FDB6030L

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FDP6030L/FDB6030L

August 2003

FDP6030L/FDB6030L
N-Channel Logic Level PowerTrench MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features
48 A, 30 V RDS(ON) 13 m VGS 10 V RDS(ON) 17 m VGS 4.5 V

Critical DC electrical parameters specified at elevated temperature High performance trench technology for extremely low RDS(ON) 175 C maximum junction temperature rating

G
G D S TO-220
FDP Series

TO-263AB
FDB Series

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
30 20
(Note 1)

Units
V V A W W/ C C

48 150 52 0.3 65 to 175

Total Power Dissipation TC 25 C Derate above 25 C Operating and Storage Junction Temperature Range

Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.9 62.5 C/W

Package Marking and Ordering Information
Device Marking FDB6030L FDP6030L Device FDB6030L FDP6030L Reel Size 13 Tube Tape width 24mm n/a Quantity 800 units 45

2003 Fairchild Semiconductor Corporation

FDP6030L/FDB6030L Rev E(W)