FDB6670AS

FDP6670AS/FDB6670AS

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FDP6670AS/FDB6670AS

January 2005

FDP6670AS/FDB6670AS
30V N-Channel PowerTrench SyncFETTM
General Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low and low gate charge. The FDP6670AS RDS(ON) includes an integrated Schottky diode using Fairchild s monolithic SyncFET technology. The performance of the FDP6670AS/FDB6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode.

Features
31 A, 30 V. RDS(ON) 8.5 m VGS 10 V RDS(ON) 10.5 m VGS 4.5 V Includes SyncFET Schottky body diode Low gate charge (28nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability
D

G
G D TO-220 S
FDP Series

TO-263AB
FDB Series

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
30 20 62
(Note 1)

Units
V V A W W/ C C C

150 62.5 0.5 55 to 150 275

Total Power Dissipation TC 25 C Derate above 25 C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.1 62.5 C/W C/W

Package Marking and Ordering Information
Device Marking FDB6670AS FDB6670AS FDP6670AS FDP6670AS Device FDB6670AS FDB6670AS NL (Note 3) FDP6670AS FDP6670AS NL (Note 4) Reel Size 13 13 Tube Tube Tape width 24mm 24mm n/a n/a Quantity 800 units 800 units 45 45
FDP6670AS/FDB6670AS Rev A(X)

2005 Fairchild Semiconductor Corporation