FDB6690S

FDP6690S/FDB6690S

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FDP6690S/FDB6690S

SEPTEMBER 2001

FDP6690S/FDB6690S
30V N-Channel PowerTrench SyncFET TM
General Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S includes an integrated Schottky diode using Fairchild s monolithic SyncFET technology. The performance of the FDP6690S/FDB6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6035AL/FDB6035AL in parallel with a Schottky diode.

Features
21 A, 30 V. RDS(ON) 15.5 m VGS 10 V RDS(ON) 23.0 m VGS 4.5 V Includes SyncFET Schottky body diode Low gate charge (11nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability

G
G D TO-220 S
FDP Series

TO-263AB
FDB Series

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

T A 25 oC unless otherwise noted

Parameter

Ratings
30 20
(Note 1) (Note 1)

Units
V V A W W/ C C C

42 140 48 0.5 55 to 150 275

Total Power Dissipation TC 25 C Derate above 25 C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.6 62.5 C/W C/W

Package Marking and Ordering Information
Device Marking FDB6690S FDP6690S Device FDB6690S FDP6690S Reel Size 13 Tube Tape width 24mm n/a Quantity 800 units 45

2001 Fairchild Semiconductor Corporation

FDP6690S/FDB6690S Rev C (W)