FDB66N15

FDB66N15 150V N-Channel MOSFET

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FDB66N15 150V N-Channel MOSFET

September 2005

UniFET
FDB66N15
150V N-Channel MOSFET Features
66A, 150V, RDS(on) 0.036 VGS 10 V Low gate charge ( typical 49 nC) Low Crss ( typical 78.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

D
D

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FDB66N15
150 66 41.8 264 30 1240 66 35.7 4.5 357 2.86 -55 to 150 300

Unit
V A A A V mJ A mJ V/ns W W/ C C C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RJA RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient

Min.
----

Max.
0.35 40 62.5

Unit
C/W C/W C/W

When mounted on the minimum pad size recommended (PCB Mount)

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com