FDB8870

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FDB8870

November 2004

FDB8870
N-Channel PowerTrench MOSFET 30V, 160A, 3.9m
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Features
rDS(ON) 3.9m VGS 10V, ID 35A , rDS(ON) 4.4m VGS 4.5V, ID 35A , High performance trench technology for extremely low rDS(ON) Low gate charge

Applications
DC/DC converters

High power and current handling capability

D
GATE

G
SOURCE DRAIN (FLANGE)

TO-263AB
FDB SERIES

S

MOSFET Maximum Ratings TC 25 C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC 25oC, VGS 10V) (Note 1) ID Continuous (TC 25oC, VGS 4.5V) (Note 1) Continuous (Tamb 25oC, VGS 10V, with RJA 43oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC Operating and Storage Temperature 160 150 23 Figure 4 300 160 1.07 -55 to 175 A A A A mJ W W/oC
oC

Ratings 30 20

Units V V

Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 ( Note 3) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.94 62 43
o o

C/W C/W

oC/W

Package Marking and Ordering Information
Device Marking FDB8870 FDB8870
2004 Fairchild Semiconductor Corporation

Device FDB8870 FDB8870 NL (Note 4)

Package TO-263AB TO-263AB

Reel Size 330mm 330mm

Tape Width 24mm 24mm

Quantity 800 units 800 units
FDB8870 Rev. A2

FDB8870 Datasheet Fairchild Download PDF

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FDB8870 DATASHEET