FDP8880 / FDB8880

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FDP8880 / FDB8880

February 2005

FDP8880 / FDB8880 N-Channel PowerTrench MOSFET
30V, 54A, 11.6m Features
r DS(ON) 14.5m, VGS 4.5V, ID 40A r DS(ON) 11.6m, VGS 10V, ID 40A High performance trench technology for extremely low r DS(ON) Low gate charge High power and current handling capability

General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed.

Applications
DC/DC converters

DRAIN (FLANGE) GATE

DRAIN (FLANGE)

SOURCE DRAIN GATE

D

SOURCE

G

TO-263AB
FDB SERIES

TO-220AB
FDP SERIES

S

2005 Fairchild Semiconductor Corporation FDP8880 / FDB8880 Rev. A

1

www.fairchildsemicom

FDB8880 Datasheet Fairchild Download PDF

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FDB8880 DATASHEET