FDC2612

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FDC2612

February 2002

FDC2612
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features
1.1 A, 200 V. RDS(ON) 725 m VGS 10 V

High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching speed Low gate charge (8nC typical)

Applications
DC/DC converter

D

D

S

1 2
G

6 5 4

SuperSOT TM -6

D

D

3

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation

TA 25oC unless otherwise noted

Parameter

Ratings
200 20
(Note 1a)

Units
V V A W C

1.1 4 1.6 0.8 -55 to 150

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 30

C/W C/W

Package Marking and Ordering Information
Device Marking .262 Device FDC2612 Reel Size 7 Tape width 8mm Quantity 3000 units

2002 Fairchild Semiconductor Corporation

FDC2612 Rev B3 (W)

FDC2612 Datasheet Fairchild Download PDF

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FDC2612 DATASHEET