FDC3601N

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FDC3601N

August 2001

FDC3601N
Dual N-Channel 100V Specified PowerTrenchMOSFET
General Description
These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Applications Load switch Battery protection Power management

Features 1.0 A, 100 V.

RDS(ON) 500 m VGS 10 V RDS(ON) 550 m VGS 6.0 V

Low gate charge (3.7nC typical) Fast switching speed. High performance trench technology for extremely
low R DS(ON) .

SuperSOTTM-6 package: small footprint 72%
(smaller than standard SO-8); low profile (1mm thick).

D2 S1 D1

4 5
G2

3 2 1

SuperSOT TM -6

S2 G1

6

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
100 20
(Note 1a)

Units
V V A W

1.0 4.0 0.96 0.9 0.7 -55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

130 60

C/W C/W

Package Marking and Ordering Information
Device Marking .601 Device FDC3601N Reel Size 7 Tape width 8mm Quantity 3000 units

2001 Fairchild Semiconductor Corporation

FDC3601N Rev C(W)

FDC3601N Datasheet Fairchild Download PDF

Add this permalink to your bookmarks for future download of FDC3601N datasheet

Permalink: http://datasheet.emcelettronica.com/fairchild/FDC3601N

FDC3601N DATASHEET