FDC3612

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FDC3612

February 2002

FDC3612
100V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features
2.6 A, 100 V RDS(ON) 125 m VGS 10 V RDS(ON) 135 m VGS 6 V

Applications
DC/DC converter

High performance trench technology for extremely low RDS(ON) Low gate charge (14nC typ) High power and current handling capability Fast switching speed

D

D

S

1 2
G

6 5 4

SuperSOT TM -6

D

D

3

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation

TA 25oC unless otherwise noted

Parameter

Ratings
100 20
(Note 1a)

Units
V V A W C

2.6 20 1.6 0.8 55 to 150

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 30

C/W C/W

Package Marking and Ordering Information
Device Marking .362 Device FDC3612 Reel Size 7 Tape width 8mm Quantity 3000 units

2002 Fairchild Semiconductor Corporation

FDC3612 Rev B3 (W)

FDC3612 Datasheet Fairchild Download PDF

Add this permalink to your bookmarks for future download of FDC3612 datasheet

Permalink: http://datasheet.emcelettronica.com/fairchild/FDC3612

FDC3612 DATASHEET